Normal view MARC view ISBD view

MOSFET in circuit design; metal-oxide-semiconductor filed-effect transistors for discrete and integrated-circuit technology

By:

Material type: Text

TextSeries: ; Texas instruments electronics seriesPublication details: New York McGraw-Hill Book Company 1967Description: xiii+146p

Tags from this library: No tags from this library for this title. Log in to add tags.

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Home library	Call number	Status	Date due	Barcode
Text	Central Power Research Institute	Central Power Research Institute	621.38 CRA.67 (Browse shelf(Opens below))	Available		5308

There are no comments on this title.

to post a comment.